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    公开号:NL1036048A1
    申请号:NL1036048
    申请日:2008-10-10
    公开日:2009-04-16
    发明作者:Muhammad Arif
    申请人:Asml Holding Nv；
    IPC主号:
    专利说明:

    PULSE TO PULSE ENERGY EQUALIZATION OF LIGHT BEAM INTENSITY
    BACKGROUND
    Field of the Invention
    The present invention is generally directed to optics. More particularly, the present invention relates to equalizing output intensity or a light beam useful in lithographic processing.
    Related Art A lithographic apparatus is a machine that applies a desired pattern to a substrate or part of a substrate. A lithographic apparatus may be used, for example, in the manufacture of flat panel displays, integrated circuits (ICs) and other devices involving fine structures. In a conventional apparatus, light is directed to a patterning device, which may be referred to as a mask, a reticle, an array, or individually programmable or controllable elements (maskless), or the like. The patterning device may be used to generate a circuit pattern corresponding to an individual layer or an IC, flat panel display, or other device. This pattern may have been transferred onto all of the substrate (e.g., a glass plate, a wafer, etc.), provided by imaging onto a layer of radiation-sensitive material (e.g., resist) on the substrate. The imaging may include the processing of light through a projection system, which may include optical components such as mirrors, lenses, beam splitters, and the like. Other components or devices may exist in a lithographic apparatus that can also contain optical components.
    Some lithography apparatuses require extremely small dose control variation. For example, some tools require less than 0.5% dose control variation for single pulse printing. The pulse to pulse variation from a light source, such as a laser, can be upwards or 10% or more. One currently-used solution to this problem is the use of a Pockel's Cell. A Pockel's Cell is an electro-optic device that can be used as a switch. It modifies the phase between two polarization states (fast and slow axis). A Pockel's Cell can be used between crossed polarizers to modulate, or control, the intensity of an optical beam. The effect on which Pockel's Cell device is based is called Pockel's effect or linear electro-optical effect. There are many downsides to using a Pockel's Cell approach, however. These downsides include the requirement of a very high voltage, optics that take up a large volume of space and are very complicated, extremely complex detection and switching electronics, and deterioration of transmission due to two photon absorption / color center formation.
    LETTER SUMMARY
    In an embodiment, a system for equalizing pulse to pulse energy or a light beam having an unequalized input intensity includes a group of optical devices including an optical device configured to exhibit third order nonlinear properties. The transmission properties of an unequalized light beam passing through the group of optical devices change, such that an output intensity or a resulting light beam output from the optical devices is equalized.
    In one example, the group of optical devices may include a beam splitter that receives the unequalized light beam and reflects and passes the unequalized light beam. The group of optical devices also includes a nonlinear interference filter that receives the reflected unequalized light beam from the beam splitter, reflects a first portion of the unequalized light beam, and passes a second portion of the unequalized light beam. The group of optical devices further includes a mirror that receives the first portion of the unequalized light beam from the nonlinear interference filter and reflects the first portion of the unequalized light beam. Also included is a beam combiner that receives the transmitted unequalized light beam from the beam splitter and that receives the reflected first portion of the unequalized light beam from the mirror and combines the received beams into the output light beam having equalized output intensity.
    In another example, the group of optical devices may include at least first and second prisms configured as a beam steering system, where the prisms may each have third order nonlinear properties. The unequalized light beam enters and is processed by the first prism, and the processed light beam is then passed to, and processed by, the second prism. The group of optical devices may also include an aperture following the prisms that receives the processed light beam from the second prism and passes the output light beam having equalized output intensity. A lithography system is also presented. In an embodiment, the lithography system includes a source of radiation configured to emit a beam of radiation, an illumination system configured to process the beam of radiation, a patterning device configured to pattern the processed beam of radiation, and a projection system configured to project the patterned beam of radiation onto a target portion or a substrate. The system further includes a pulse to pulse energy equalizer located downstream or the source of radiation and including a group of optical devices including an optical device with third order nonlinear properties. Effective transmission properties of the beam of radiation are changed as the beam of radiation passes through the group of optical devices, such that an output intensity of the beam of radiation is equalized as it leaves the group of optical devices. A method of equalizing pulse to pulse energy in a light beam is also presented. In an embodiment, transmission properties of a light beam are altered by passing the light beam through optical material having third order nonlinear properties, and processing the light beam, such that pulse to pulse energy variation in the light beam stabilizes. In an embodiment, the altered transmission properties of the light beam differ depending on an incident intensity level of the light beam. In one example, the light beam is combined with a first portion of the light beam reflected from the optical material, such a resulting combined light beam has equalized output intensity. In another example, the altering of transmission properties includes steering the light beam based on an effective refractive index that is based on an incident intensity level of the light beam. In this example, the light beam may be further passed through an aperture.
    Further vary, features, and advantages of the present invention, as well as the structure and operation of the various various of the present invention, are described in detail below with reference to the accompanying drawings.
    LETTER DESCRIPTION OF THE DRAWINGS / FIGURES
    The accompanying drawings, which are included and form a part of the specification, illustrate the present invention, together with the description, further serve to explain the principles of the invention and to enable a person skilled in the pertinent art to make and use the invention. FIG. 1 depicts an exemplary pulse to pulse equalizing system, according to an embodiment of the present invention. FIG. 2 is a graph showing transmission properties or a bistable device, such as the non-linear optical device shown in FIG. 1, according to an embodiment of the present invention. FIG. 3 depicts an exemplary pulse to pulse equalizing system, according to an embodiment of the present invention. FIG. 4 is a block diagram showing equalization or a pulse train after passing through a nonlinear optical device, such as the exemplary ones depicted in the pulse to pulse equalizing systems or FIGs. 1 and 3, according to an embodiment of the present invention. FIG. 5 is a block diagram or an exemplary lithography system, which may include a pulse to pulse equalizing system, such as the exemplary ones shown in FIGs. 1 and 3, according to an embodiment of the present invention. FIG. 6 is a diagram or another exemplary lithography system, which may include a pulse to pulse equalizing system, such as the exemplary ones shown in FIGs. 1 and 3, according to an embodiment of the present invention. FIG. 7 is a flowchart depicting a method of equalizing pulse to pulse energy or a light beam, according to an embodiment of the present invention. FIGs. 8 and 9 are flowcharts depicting possible examples of step 704 or the method shown in FIG. 7, according to various various of the present invention.
    The present invention will be described with reference to the accompanying drawings. The drawing in which an element first appears is typically indicated by the leftmost digit (s) in the corresponding reference number.
    DETAILED DESCRIPTION
    While specific configurations, arrangements, and steps are discussed, it should be understood that this is done for illustrative purposes only. A person skilled in the pertinent art (s) will recognize that other configurations, arrangements, and steps may be used without departing from the spirit and scope of the present invention. It will be apparent to be a person skilled in the art (s) that this invention may also be employed in a variety of other applications.
    It is noted that references in the specification to "one embodiment", "an embodiment", "an example embodiment", etc., indicate that the embodiment described may include a particular feature, structure, or characteristic, but every edition may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it would be within the knowledge of one skilled in the art to incorporate such a feature, structure, or characteristic in connection with other, whether or not explicitly described. FIG. 1 depicts an exemplary pulse to pulse equalizing system 100, according to an embodiment of the present invention. System 100 includes a beam splitter 102, a nonlinear optical (NLO) device 104 (eg, an interference filter), a mirror 106, and a beam combiner 108. Beam splitter 102 receives a light beam 110 from a light source (not shown) , such as a laser, and passes a portion of the light beam (beam 111) and reflects a portion of the light beam (beam 112). The NLO device 104 receives the reflected light beam 112 from beam splitter 102. NLO device 104 comprises a non-linear material having third-order non-linearity. A material having third order nonlinearity has third order non-linear interactions, such as third harmonic generation and an intensity dependent refractive index (also known as the Optical Kerr Effect, further discussed below). In FIG. 1, the NLO device 104 is made out of a non-linear optical material showing third order non-linearity and coated on two surfaces with a partially reflective coating to make a non-linear Fabry-Perot interference filter. This can also be done by placing the nonlinear optical material between two partially reflective discrete mirrors. When a nonlinear material has a third order nonlinearity is placed inside a Fabry-Perrot cavity, it shows bistability. Depending on the intensity of the light beam 112 reflected from beam splitter 102, NLO device 104 reflects and passes the light beam 112 at differing intensities. In other words, the transmission properties of NLO device 104 will vary based on the incident intensity of the light beam 112. For example, if the intensity of the reflected light beam 112 is received at NLO device 104, or becomes, below a certain threshold , most of the light beam 112 will be reflected by NLO device 104 (as beam 113), and the output intensity of the beam transmitted through NLO device 104 (as beam 114) will be lower than the reflected beam 113. On the other hand , if the intensity of the reflected light beam is 112 received at NLO device 104, or becomes, higher than a certain threshold, most of the light beam 112 will be transmitted through NLO device 104 (as beam 114), and the amount of beam 112 reflected by NLO device 104 (as beam 113) will be lower. NLO device 104 essentially works as a gate or filter. For a stronger beam (ie, a beam with a high incident intensity), a larger portion is transmitted through NLO device 104 and a smaller portion is reflected, and for a weaker beam (ie, a beam with a low incident intensity), a smaller portion is transmitted through NLO device 104, and a larger portion is reflected.
    Exemplary bistable properties of NLO device 104 can be shown in graph 200 or FIG. 2. In graph 200, the input intensity (or incident intensity) or a light beam incident on NLO device 104 is shown by the horizontal axis 220, and the output intensity of a light beam transmitted through NLO device 104 is shown by the vertical axis 222. For lower input intensities, lower than a certain threshold, the output intensity is lower, as shown by lower plot 226. In contrast, for higher input intensities, higher than a certain threshold, the output intensity is higher, as shown by higher plot 224. As shown in graph 200, the relevant threshold can vary depending on whether the input intensity is dropping below a threshold (eg, threshold 227) from a higher intensity or rising above a threshold (eg, threshold 228) from a lower intensity .
    Referring back to FIG. 1, NLO device 104 passes beam 112 as beam 114, having an intensity dependent on the incident intensity of beam 112, as discussed above. In this example, beam 114 is unwanted excess light. NLO device 104 reflects beam 112 as beam 113, also having an intensity dependent on the incident intensity of beam 112, as discussed above. In this way, NLO device 104 acts as an optical gate, for which the transmission property changes based on the incident intensity. The switching time for this optical gate can be approximately 10'12 seconds.
    Mirror 106 receives beam 113 and reflects beam 113 toward beam combiner 108 as beam 115. Beam combiner 108 also receives beam 111 from beam splitter 102. Beam combiner 108 then combines beams 111 and 115 to form combined beam 116. The effect of utilizing a system Such as system 100 is that combined beam 116 will have an equalized total intensity. For more information on nonlinear optics and optics, see Boyd, Robert W., Nonlinear Optics. Academic Press, San Diego, California, 1992, pp. 159-164 and 262-263, and Awwal, A.A.S. and Arif, M., "Information Processing and Micro-Optical System: Free Space Optical Computing," in Encyclopedia of Modem Optics. Ed. Bob D. Guenther, Elsevier, Vol. 2, pp. 247-256, December 2004, both of which are incorporated by reference in their rapeties. FIG. 3 depicts another exemplary pulse to pulse equalizing system 300, according to an embodiment of the present invention. System 300 includes prisms 330 and 332 configured as a beam steering system, and each having third order nonlinearity. As discussed above, the presence of third order nonlinearity in optical matter gives rise to an intensity dependent refractive index, also known as the Optical Kerr Effect. Depending on the incident intensity level of a light beam entering each prism, the light beam will have an effectively different refractive index inside the prism. For example, a light beam 334 received by first prism 330 that has a lower incident intensity will experience an effective refractive index resulting in a beam as shown in upper beam 336. In contrast, a light beam 334 received by first prism 330 that has a higher incident intensity will see an effective refractive index resulting in a beam as shown in lower beam 338. Prisms 330 and 332 can be used to create a very efficient beam steering system based on the input intensity. When accompanying the prisms 330 and 332 with an aperture, such as hard aperture 340, to limit the intensity further through, the system becomes a very efficient pulse to pulse optical limiter that stabilizes the pulse to pulse variation.
    In the example shown in FIG. 3, only two prisms are shown. However, the invention is not limited to two prisms. The number of prisms used depends on how much variation is present in the input beam, how tight the variation is to be stabilized, and the level of the input intensity.
    The Optical Kerr Effect is usually small for a low input intensity. For a higher input intensity, however, the refractive index can be shown as n = no + n2I, where n0 is the linear portion of the refractive index, n2 is the nonlinear portion of the refractive index, and I is the intensity of the incident beam. For further information on this refractive index and nonlinear optics, see Boyd, Robert W., Nonlinear Optics. Academic Press, San Diego, California, 1992, pp. 159-164 and 262-263, which is incorporated by reference in its entirety.
    The exemplary systems 100 and 300 are two example systems for accomplishing the equalizing or stabilizing or pulse to pulse variation. However, many different systems, and configurations of each system, using nonlinear optical devices having third order nonlinear properties, can be contemplated after reviewing this disclosure. For example, system 100 can be cascaded and system 300 can contain more than two prisms for added control. FIG. 4 is a block diagram showing the equalization of a pulse train after passing through a non-linear optical device, such as that depicted in the pulse to pulse equalizing systems or FIGs. 1 and 3, according to an embodiment of the present invention. FIG. 4 shows a pulse to pulse equalization system 400 including a light source 444, a pulse to pulse equalizer 446 (such as system 100 or 300), and an optional variable optical attenuator (VAT) 448. VAT 448 is used to control the dose of light. It controls the energy (or intensity) in the system. This is a beneficial control for an illumination system. The light source emits a light beam 450 with an unequalized pulse train 454. Pulse to pulse equalizer 446 receives light beam 450 and passes light beam 452 to VAT 448. Light beam 452 has an equalized pulse train 456. Using system 400, radiation dose can be based on a deterministic model by VAT 448 without the need to detect, measure, and cut any fluence. This means that VAT 448 does not depend on a measured pulse energy to select the required setting. Rather VAT 448 can be configured without knowing, the energy of the individual pulses, since the energy is already stabilized pulse to pulse. FIG. 5 is a block diagram or an exemplary lithography system 500 that may include a pulse to pulse equalizing system, according to an embodiment of the present invention. Lithography system 500 includes a light source 560, an optional beam delivery system 562, an illumination system 564, a patterning device 566, a projection system 568, and a substrate stage 570. a pulse to pulse equalizing system, such as system 100 or 300 , may be located anywhere downstream or light source 560, depending on where pulse to pulse equalization is desired. Ideally, the pulse to pulse equalizing system is located very soon after light source 560 in lithography system 500, such as directly after light source 560 (at, for example, location "A" as depicted in FIG. 5), to eliminate any pulse to pulse intensity variation in the remainder of the lithography system 500. Although specific reference may have been made above to the use of the invention in the context of optical lithography, it will be appreciated that the invention can be used in other applications and optical systems in which stabilizing pulse to pulse energy is desired.
    It would be understood by one skilled in the relevant art (s) that lithography system 500 is just one example of a system that may include pulse to pulse equalizing system 100 or 300, where another exemplary system is shown in FIG. 6. FIG. 6 depicts a lithographic apparatus according to an embodiment of the invention. The apparatus comprises an illumination system IL, a support structure MT, a substrate table WT, and a projection system PS.
    The illumination system IL is configured to condition a radiation beam B (e.g., a beam or UV radiation as provided by a mercury arc lamp, or a beam or DUV radiation generated by a KrF excimer laser or an ArF excimer laser).
    The support structure (eg, a mask table) MT is constructed to support a patterning device (eg, a mask or dynamic patterning device) MA having a mask pattern MP and connected to a first positioner PM configured to accurately position the patterning device in accordance with with certain parameters.
    The substrate table (e.g., a wafer table) WT is constructed to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters.
    The projection system (eg, a refractive projection lens system) PS is configured to project a pattern imparted to the radiation beam B by the pattern MP or the patterning device MA on a target portion C (eg, including one or more dies) of the substrate W.
    The illumination system may include various types of optical components, such as refractive, reflective, and diffractive types of optical components, or any combination thereof, for directing, shaping, or controlling radiation. The illumination system may also include a pulse to pulse equalizer, as described above with respect to FIGs. 1 and 3.
    The support structure supports, i.e., bears the weight of, the patterning device. It holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is a hero in a vacuum environment. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms "reticle" or "mask" may be considered synonymous with the more general term "patterning device."
    The term "patterning device" used should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern MP includes phase-shifting features or so-called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
    The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase shift, and attenuated phase shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which may be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
    The term "projection system" used should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, and catadioptric optical systems, or any combination of, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term "projection lens" may also be considered as synonymous with the more general term "projection system".
    As here depicted, the apparatus is or a transmissive type (e.g., employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g., employing a programmable mirror array or a type referred to above, or employing a reflective mask).
    The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and / or two or more mask tables). In such "multiple stage" machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
    The lithographic apparatus may also be a type of at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, e.g., water, so as to fill a space between the projection system and the substrate. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term "immersion" as used does not mean that a structure, such as a substrate, must be submerged in liquid, but rather only means that liquid is located between the projection system and the substrate during exposure.
    Referring to FIG. 6, the illumination system IL receives a radiation beam from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the radiation beam is passed from the source SO to the illumination system IL with the aid of a beam delivery system BD including, for example, suitable directing mirrors and / or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The source SO and the illumination system IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
    The illumination system IL may include an adjuster AD for adjusting the angular intensity distribution of the radiation beam at mask level. Generally, at least the outer and / or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) or the intensity distribution in a pupil IPU or the illumination system can be adjusted. In addition, the illumination system IL may include various other components, such as an integrator IN and a condenser CO. The illumination system may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section at mask level.
    The radiation beam B is an incident on the patterning device (e.g., mask MA or programmable patterning device), which is a hero on the support structure (e.g., mask table MT), and is patterned by the patterning device in accordance with a pattern MP. Having traversed the mask MA, the radiation beam B passes through the projection system PS, which is the beam onto a target portion C of the substrate W.
    The projection system has a pupil PPU conjugate to the illumination system pupil IPU, where portions of radiation emanating from the intensity distribution at the illumination system pupil IPU and traversing a mask pattern without being affected by diffraction at a mask pattern create an image of the intensity distribution at the illumination system pupil IPU.
    With the aid of the second positioner PW and position sensor IF (eg, an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, eg, so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in FIG. 8) may be used to accurately position the mask MA with respect to the path of the radiation beam B, eg, after mechanical retrieval from a mask library, or during a scan. In general, movement of the mask table MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the mask table MT may be connected to a short-stroke actuator only, or may be fixed. Mask MA and substrate May be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one that is provided on the mask MA, the mask alignment marks may be located between the dies.
    The depicted apparatus could be used in at least one of the following modes: 1. In step mode, the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (ie, a single static exposure). The substrate table WT is then shifted in the X and / or Y direction so that a different target portion can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure. 2. In scan mode, the mask table MT and the substrate table WT are scanned synchronously while a pattern beamed to the radiation beam is projected onto a target portion C (i.e., a single dynamic exposure). The velocity and direction of the substrate table WT relative to the mask table MT may be determined by the (de-) magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) or the target portion in a single dynamic exposure, whereas the length of the scanning motion has the height (in the scanning direction) of the target portion. 3. In another mode, the mask table MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern is imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation may be readily applied to maskless lithography that utilizes a programmable patterning device, such as a programmable mirror array, or a type as referred to above.
    Combinations and / or variations on the modes described above or use or entirely different modes or use may also be employed.
    Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms "wafer" or "die "may be considered as synonymous with the more general terms" substrate "or" target portion ", respectively. The substrate referred to may be processed, before or after exposure, in for example a track (a tool that typically applies to a layer of resist to a substrate and develops the exposed resist), a metrology tool and / or an inspection tool. Where applicable, the disclosure may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so the term substrate used may also refer to a substrate that already contains multiple processed layers.
    The terms "radiation" and "beam" used include and compass all types of electromagnetic radiation, including ultraviolet (UV) radiation (eg having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (eg having a wavelength in the range of 5-20 nm). FIG. 7 is a flowchart depicting a method 700 or equalizing pulse to pulse energy in a light beam. Method 700 starts at step 702 and immediately proceeds to step 704. In step 704, transmission properties of a light beam are altered by passing the light beam through optical material having third order nonlinear properties, such that pulse to pulse energy variation in the light beam stabilizes. Method 700 ends at step 706. FIGs. 8 and 9 are flowcharts depicting possible examples of step 704 or the method shown in FIG. 7, according to the present or the present invention. FIG. 8 is a flowchart depicting a possible example process 800 or step 704 or equalizing pulse to pulse energy in a light beam using the pulse to pulse equalizer described with reference to system 100 or FIG. 1. Example process 800 starts at step 802. In step 802, the light beam is combined with a first portion of the light beam reflected from the optical material, such a resulting combined light beam has equalized output intensity. In step 804, example 800 returns to step 706 or method 700. FIG. 9 is a flowchart depicting a possible example process 900 or step 704 or equalizing pulse to pulse energy in a light beam using the pulse to pulse equalizer described with reference to system 300 or FIG. 3. Example process 900 starts at step 902. In step 902, the light beam is steered based on a refractive index dependent upon an incident intensity level of the light beam. In step 904, the light beam has passed through an aperture. In step 906, example 800 returns to step 706 or method 700.
    The above-described pulse to pulse equalization systems may be used to stabilize pulse to pulse variation in optical systems, including lithography systems. It is appreciated that the above-described can be used in mask-based lithography, as well as, maskless lithography. The else may also be used for immersion lithography, interferometric lithography, or in other systems that include a similar functioning optical system.
    The preceding description describes pulse to pulse equalization using nonlinear optical material that provides an elegant and effective way to control light with light. This can make optical designs much less expensive and compact. A delay line that would otherwise be necessary for Pockel's Cell trimming can be eliminated. The electronics become simpler and less expensive because light is controlling light in real time. In fact, this may allow for control or pulse to pulse variation without any need for electronics. As stated earlier, this allows a radiation dose to be set using a variable optical attenuator (VAT), for example, without any need to detect, measure, and cut any fluence.
    Conclusion
    It is appreciated that the Detailed Description section, and not the Summary and Abstract sections, is intended to be used to interpret the clauses. The Summary and Abstract sections may set forth one or more but not all exemplary of the present invention as contemplated by the inventor (s), and thus, are not intended to limit the present invention and the appended clauses in any way.
    The present invention has been described above with the aid of functional building blocks illustrating the implementation of specified functions and relationships. The boundaries of these functional building blocks have been arbitrarily defined for the convenience of the description. Alternate boundaries can be defined as long as the specified functions and relationships are appropriately performed.
    The foregoing description of the specific expired will so fully reveal the general nature of the invention that others can, by applying knowledge within the skill of the art, readily modify and / or adapt for various applications such specific expire, without undue experimentation, without departing from the general concept of the present invention. Therefore, such adaptations and modifications are intended to be within the meaning and range of equivalents of the disclosed exponent, based on the teaching and guidance presented. It is understood that the phraseology or terminology is for the purpose of description and not of limitation, such that terminology or phraseology or the present specification is interpreted by the skilled artisan in light of the teachings and guidance. While various various of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. It will be apparent to persons skilled in the relevant art that various changes in form and detail can be made therein without departing from the spirit and scope of the invention. Thus, the breadth and scope of the present invention should not be limited by any of the above-described examples, but should be defined only in accordance with the following clauses and their equivalents. Other aspects of the invention are set out as in the following numbered clauses: 1. A system for equalizing pulse to pulse energy or a light beam having an unequalized input intensity, including: a group of optical devices including an optical device configured to exhibit third order nonlinear properties, with transmission properties of an unequalized light beam passing through the group of optical devices change, such an output intensity or a resulting light beam output from the optical devices is equalized. 2. The system of clause 1, comprising the group of optical devices comprising: a beam splitter that receives the unequalized light beam and reflects and passes the unequalized light beam; a nonlinear interference filter that receives the reflected unequalized light beam from the beam splitter, reflects a first portion of the unequalized light beam, and passes a second portion of the unequalized light beam; a mirror that receives the first portion of the unequalized light beam from the nonlinear interference filter and reflects the first portion of the unequalized light beam; and a beam combiner that receives the transmitted unequalized light beam from the beam splitter and receives the reflected first portion of the unequalized light beam from the mirror and combines the received beams into the output light beam having equalized output intensity. 3. The system of clause 2, the nonlinear interference filter comprises a bistable device configured such that when an input intensity of the received unequalized light beam becomes higher than a first threshold, transmission of the second portion of the unequalized light beam becomes higher and an amount of the reflected first portion becomes lower, and when the input intensity of the received unequalized light beam becomes lower than a second threshold, transmission of the second portion of the unequalized light beam becomes lower and the amount of the reflected first portion becomes higher . 4. The system of clause 1, the group of optical devices comprises: least first and second prisms configured as a beam steering system, the first and second prisms each having third order nonlinear properties, the unequalized light beam enters and is processed by the first prism, and the processed light beam is then passed to, and processed by, the second prism. 5. The system of clause 4, the group of optical devices further comprises: an aperture following the second prism, the processed light beam from the second prism is received by the aperture and passed by the aperture as the output light beam having equalized output intensity. 6. The system of clause 5, where the aperture is a hard aperture. 7. The system of clause 4, with an effective refractive index in each of the first and second prisms is based on an incident intensity level or an entering beam. 8. The system of clause 1, further including: a light source that provides the unequalized light beam to the group of optical devices; and a variable optical attenuator that receives the output light beam and provides dose control. 9. The system of clause 1, further including: a light source configured to produce the unequalized light beam and provide the unequalized light beam to the group of optical devices; an illumination system configured to process the output light beam; and a patterning device configured to pattern the processed light beam. 10. The system of clause 9, further including: a beam delivery system configured to directly the resulting light beam between the group of optical devices and the illumination system. 11. The system of clause 9, further including: a projection system configured to project the patterned light beam onto a target portion of a substrate. 12. The system of clause 9, where the light source is a laser. 13. A lithography system including: a source of radiation configured to emit a beam of radiation; an illumination system configured to process the beam of radiation; a patterning device configured to pattern the processed beam of radiation; a projection system configured to project the patterned beam of radiation onto a target portion of a substrate; and a pulse to pulse energy equalizer located downstream of the source of radiation and including a group of optical devices including an optical device with third order nonlinear properties, effective effective transmission properties of the beam of radiation are changed as the beam of radiation passes through the group of optical devices such that an output intensity of the beam of radiation is equalized as it leaves the group of optical devices. 14. A method of equalizing pulse to pulse energy in a light beam, including: altering transmission properties of a light beam through passing the light beam through optical material having third order nonlinear properties; and processing the light beam, such that pulse to pulse energy variation in the light beam stabilizes. 15. The method of clause 14, where the altered transmission properties of the light beam differ depending on an incident intensity level of the light beam. 16. The method of clause 14, using the altering transmission properties including placing the optical material having third order nonlinear properties into a Fabry-Perrot cavity to provide bistability, such that when an input intensity of the light beam on the optical material becomes higher than a first threshold, an amount of a reflected first portion of the light beam from the optical material becomes lower, and transmission of a second portion of the light beam through the optical material becomes higher; and when the input intensity of the light beam on the optical material becomes lower than a second threshold, transmission of the second portion of the light beam through the optical material becomes lower, and the amount of the reflected first portion from the optical material becomes higher . 17. The method of clause 16. The processing of the light beam comprises: combining the light beam with the first portion reflected from the optical material such that a resulting combined light beam has equalized output intensity. 18. The method of clause 14, where the altering transmission properties includes steering the light beam based on an effective refractive index that is based on an incident intensity level of the light beam. 19. The method of clause 18, where the processing the light beam comprises: passing the light beam through an aperture. 20. The method of clause 18, where the altering transmission properties includes defining the effective refractive index by
    where n is the effective refractive index; n0 is a linear portion of the effective refractive index; n2 is a non-linear portion of the effective refractive index; and I is the incident intensity level of the light beam.
    权利要求:
    Claims (1)
    [1]
    A lithographic immersion lithography apparatus, comprising: a projection system adapted to project a patterned radiation beam to a target portion of a substrate, the substrate being supported by a substrate table, a liquid supply system adapted to a provide a high-numerical aperture immersion fluid in a space between the projection system and the substrate or substrate table, and a reuse system adapted to collect fluid from the fluid supply system and to direct the fluid to the fluid supply system to feed.
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    法律状态:
    2009-06-02| AD1A| A request for search or an international type search has been filed|
    优先权:
    申请号 | 申请日 | 专利标题
    US98005907P| true| 2007-10-15|2007-10-15|
    US98005907|2007-10-15|
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